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BUK9875-100A Datasheet Preview

BUK9875-100A Datasheet

N-channel MOSFET

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BUK9875-100A
N-channel TrenchMOS logic level FET
19 March 2014
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for logic level gate drive sources
3. Applications
12 V, 24 V and 42 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
ID
drain current
VGS = 5 V; Tsp = 25 °C; Fig. 2; Fig. 3
Ptot total power dissipation Tsp = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 8 A; Tj = 25 °C
VGS = 10 V; ID = 8 A; Tj = 25 °C
VGS = 5 V; ID = 8 A; Tj = 25 °C; Fig. 12;
Fig. 13
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
ID = 7 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 5 V; Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 100 V
- - 7A
- - 8W
- - 84 mΩ
- 62 72 mΩ
- 64 75 mΩ
- - 49 mJ




nexperia

BUK9875-100A Datasheet Preview

BUK9875-100A Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
BUK9875-100A
N-channel TrenchMOS logic level FET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 D drain
3 S source
4 D drain
Simplified outline
4
123
SC-73 (SOT223)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK9875-100A
SC-73
BUK9875-100A/CU SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
SOT223
7. Marking
Table 4. Marking codes
Type number
BUK9875-100A
BUK9875-100A/CU
Marking code
987510A
987510
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
Ptot
total power dissipation
Tsp = 25 °C; Fig. 1
ID drain current
Tsp = 25 °C; VGS = 5 V; Fig. 2; Fig. 3
Tsp = 100 °C; VGS = 5 V; Fig. 2
IDM peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3
BUK9875-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 March 2014
Min Max Unit
- 100 V
- 100 V
-10 10
V
- 8W
- 7A
- 4A
- 28 A
© Nexperia B.V. 2017. All rights reserved
2 / 12


Part Number BUK9875-100A
Description N-channel MOSFET
Maker nexperia
Total Page 12 Pages
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