BUK98150-55A
Description
N-channel enhancement mode field-effect power transistor in a plastic package using Trench MOS™1 technology, featuring very low on-state resistance. Product availability: BUK98150-55A in SOT223 (SC-73).
2. Features s s s s Trench MOS™ technology Q101 pliant 150 °C rated Logic level patible.
3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pin 1 2 3 4 Pinning
- SOT223 (SC-73), simplified outline and symbol Description gate (g)
Simplified outline
Symbol d drain (d) source (s) drain (d)
MBB076 g s
Top view
MSB002
- 1
SOT223 (SC-73)
1.
Trench MOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
Trench MOS™ logic level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tsp = 25 °C; VGS = 5 V Tsp = 25 °C VGS = 5 V; ID = 5 A VGS = 4.5 V; ID = 5 A VGS = 10 V; ID = 5 A Typ 128 116 Max...
