BUK98180-100A
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
- Low conduction losses due to low on-state resistance
- Q101 pliant
- Suitable for logic level gate drive sources
1.3 Applications
- 12 V, 24 V and 42 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source
Tj ≥ 25 °C; Tj ≤ 150 °C voltage
ID drain current
VGS = 5 V; Tsp = 25 °C; see Figure 1; see Figure 3
Ptot total power
Tsp = 25 °C; see Figure 2 dissipation
Static characteristics
RDSon drain-source on-state resistance
VGS = 10 V; ID = 5 A; Tj = 25 °C
VGS = 4.5 V; ID = 5 A; Tj = 25 °C
VGS = 5 V; ID = 5 A; Tj = 25 °C; see Figure 12; see Figure 13
Avalanche...
