BUK9840-55
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
- AEC Q101 pliant
- Electrostatically robust due to integrated protection diodes
- Low conduction losses due to low on-state resistance
3. Applications
- Automotive and general purpose power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
ID drain current
Tsp = 25 °C
Ptot total power dissipation Tsp = 25 °C; Fig. 4
Static characteristics
RDSon drain-source on-state VGS = 5 V; ID = 5 A; Tj = 25 °C resistance
Avalanche ruggedness
EDS(AL)S non-repetitive drainsource avalanche energy
ID = 3.6 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- -
- -
10.7 A
-...
