BUK98150-55A
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
- Low conduction losses due to low on-state resistance
- Q101 pliant
- Suitable for logic level gate drive sources
3. Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
ID drain current
VGS = 5 V; Tsp = 25 °C; Fig. 2; Fig. 3
Ptot total power dissipation Tsp = 25 °C; Fig. 1
Static characteristics
RDSon drain-source on-state resistance
VGS = 4.5 V; ID = 5 A; Tj = 25 °C VGS = 10 V; ID = 5 A; Tj = 25 °C
VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 12; Fig. 13
Dynamic characteristics
QGD gate-drain charge
VGS = 5...
