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BUK98180-100A - N-channel MOSFET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

2.

Key Features

  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Suitable for logic level gate drive sources 3.

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BUK98180-100A N-channel TrenchMOS logic level FET 16 March 2016 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Low conduction losses due to low on-state resistance • Q101 compliant • Suitable for logic level gate drive sources 3. Applications • 12 V, 24 V and 42 V loads • Automotive and general purpose power switching • Motors, lamps and solenoids 4. Quick reference data Table 1.