NP2309EFR datasheet, mosfet equivalent, natlinear

Features and benefits

* VDS =-20V，ID =-2A RDS(ON)(Typ.)=61.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=70.5mΩ @VGS=-2.5V
* High power and current handing capability
* Lead free product is acquire.

Application

General Features
* VDS =-20V，ID =-2A RDS(ON)(Typ.)=61.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=70.5mΩ @VGS=-2.5V
* High po.

Description

Schematic diagram The NP2309EFR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Feature.

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