NP2301BVR mosfet equivalent, 20v p-channel enhancement mode mosfet.
* VDS =-20V,ID =-2A RDS(ON)(Typ.)= 108mΩ @VGS=-4.5V RDS(ON)(Typ.)= 136mΩ @VGS=-2.5V
* High power and current handing capability
* Lead free product is acquire.
General Features
* VDS =-20V,ID =-2A RDS(ON)(Typ.)= 108mΩ @VGS=-4.5V RDS(ON)(Typ.)= 136mΩ @VGS=-2.5V
* High po.
Schematic diagram
The NP2301BVR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
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