NP20N10YDF
Description
The NP20N10YDF is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Low on-state resistance RDS(on) = 55 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 68 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 74 m MAX. (VGS = 4.5 V, ID = 10 A)
- Low Ciss: Ciss = 1000 p F TYP. (VDS = 25 V, VGS = 0 V)
- Logic level drive type
- Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No. NP20N10YDF-E1-AY
- 1 NP20N10YDF-E2-AY
- 1
Lead Plating Pure Sn (Tin)
Packing Tape 2500 p/reel Taping (E1 type)
Taping (E2 type)
Note:
- 1 Pb-free (This product does not contain Pb in the external electrode)
Package 8-pin HSON
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
- 1
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C)
- 2 Channel Temperature
Storage Temperature Single Avalanche Current...
