NP20N10YDF
Overview
The NP20N10YDF is N-channel MOS Field Effect Transistor designed for high current switching applications.
- Low on-state resistance RDS(on) = 55 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 68 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 74 m MAX. (VGS = 4.5 V, ID = 10 A)
- Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V, VGS = 0 V)
- Logic level drive type
- Designed for automotive application and AEC-Q101 qualified
