NP2305MR-M datasheet, mosfet equivalent, natlinear

Features and benefits

* VDS =-20V，ID =-4A RDS(ON)(Typ.)=42mΩ @VGS=-4.5V RDS(ON)(Typ.)=55mΩ @VGS=-2.5V
* High power and current handing capability
* Lead free product is acquired

Application

S G General Features
* VDS =-20V，ID =-4A RDS(ON)(Typ.)=42mΩ @VGS=-4.5V RDS(ON)(Typ.)=55mΩ @VGS=-2.5V
* High p.

Description

Schematic diagram The NP2305MR-M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S G General F.

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