NP2305MR-M mosfet equivalent, 20v p-channel enhancement mode mosfet.
* VDS =-20V,ID =-4A RDS(ON)(Typ.)=42mΩ @VGS=-4.5V RDS(ON)(Typ.)=55mΩ @VGS=-2.5V
* High power and current handing capability
* Lead free product is acquired
S G
General Features
* VDS =-20V,ID =-4A RDS(ON)(Typ.)=42mΩ @VGS=-4.5V RDS(ON)(Typ.)=55mΩ @VGS=-2.5V
* High p.
Schematic diagram
The NP2305MR-M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
S G
General F.
Image gallery
TAGS
Manufacturer
Related datasheet