NP23N06YDG datasheet, mosfet equivalent, Renesas

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Features and benefits

* Low on-state resistance ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
* Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V)
* Logic level drive type

Application

Features
* Low on-state resistance ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
* Low Ciss: Ciss = 1200 pF .

Description

The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Low on-state resistance ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
* Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0.

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