NP2012 datasheet, mosfet equivalent, natlinear

Features and benefits

* VDS =20V，ID =12A RDS(ON)(Typ.)=15mΩ @VGS=2.5V RDS(ON)(Typ.)=12mΩ @VGS=4.5V
* High power and current handing capability
* Lead free product is acquired
*.

Application

General Features
* VDS =20V，ID =12A RDS(ON)(Typ.)=15mΩ @VGS=2.5V RDS(ON)(Typ.)=12mΩ @VGS=4.5V
* High power and.

Description

Schematic diagram The NP2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features <.

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