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PXFC192207FH - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band.

Key Features

  • include input and t output matching, high gain and thermally-enhanced package with c earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and u superior reliability. PXFC192207FH Package H-37288G-4/2 Gain (dB) Drain Efficiency (%) od Two-carrier WCDMA Drive-up r VDD = 28 V,IDQ = 1600 mA, 3GPP WCDMA signal, PAR = 8 dB, p 10 MHz carrier spacing, BW 3.84 MHz 30 60 d 1930 MHz 25 1960 MHz 50 e 1990 MHz u 20 40 Gain in.

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Datasheet Details

Part number PXFC192207FH
Manufacturer Wolfspeed
File Size 746.31 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PXFC192207FH Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and t output matching, high gain and thermally-enhanced package with c earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and u superior reliability. PXFC192207FH Package H-37288G-4/2 Gain (dB) Drain Efficiency (%) od Two-carrier WCDMA Drive-up r VDD = 28 V,IDQ = 1600 mA, 3GPP WCDMA signal, PAR = 8 dB, p 10 MHz carrier spacing, BW 3.