logo

CGH35060F1 Datasheet, Wolfspeed

CGH35060F1 hemt equivalent, gan hemt.

CGH35060F1 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.43MB)

CGH35060F1 Datasheet

Features and benefits


* 3.3 - 3.6 GHz Operation
* 60 W Peak Power Capability
* 12 dB Small Signal Gain
* 8.0 W PAVE at < 2.0% EVM
* 25% Drain Efficiency at 8 W PAVE
* .

Application

The transistor is supplied in a ceramic/metal flange and pill package. Wolfspeed GaN-on-Silicon Carbide instead HEMTs a.

Description

Wolfspeed’s CGH35060F F1/P1 is a gallium nitride (GaN) high electron mobility transistor(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and BWA linear .

Image gallery

CGH35060F1 Page 1 CGH35060F1 Page 2 CGH35060F1 Page 3

TAGS

CGH35060F1
GaN
HEMT
Wolfspeed

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts