CGH35060P1 hemt equivalent, gan hemt.
* 3.3 - 3.6 GHz Operation
* 60 W Peak Power Capability
* 12 dB Small Signal Gain
* 8.0 W PAVE at < 2.0 % EVM
* 25 % Drain Efficiency at 8 W PAVE .
The transistor is supplied in a ceramic/ metal flange and pill package. Cree GaN-on-SiC HEMTs are highly correctable, e.
RES, 1/16W, 0603, 1%, 5.1 OHMS RES, 1/16W, 0603, 1%, 100 OHMS CAP, 470pF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 7.5pF, +/-0.1pF, 0603, ATC CAP, 0.6pF, +/-0.05pF, 0603, ATC CAP, 1.2pF, +/-0.1.
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