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CGH35060P1 Datasheet GaN HEMT

Manufacturer: Cree (now Wolfspeed)

Download the CGH35060P1 datasheet PDF. This datasheet also includes the CGH35060F1 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (CGH35060F1-Cree.pdf) that lists specifications for multiple related part numbers.

Overview

CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and BWA linear amplifier applications.

The transistor is supplied in a ceramic/ metal flange and pill package.

Cree GaN-on-SiC HEMTs are highly correctable, enabling even greater efficiency when used with digital pre-distortion (DPD).

Key Features

  • 3.3 - 3.6 GHz Operation.
  • 60 W Peak Power Capability.
  • 12 dB Small Signal Gain.
  • 8.0 W PAVE at < 2.0 % EVM.
  • 25 % Drain Efficiency at 8 W PAVE.
  • WiMAX Fixed Access 802.16-2004 OFDM.
  • WiMAX Mobile Access 802.16e OFDMA Rev 3.1 - February 2016 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Volta.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Wolfspeed Logo CGH35060P1 GaN HEMT Wolfspeed

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