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CGH35060P1 - GaN HEMT

Download the CGH35060P1 datasheet PDF. This datasheet also covers the CGH35060F1 variant, as both devices belong to the same gan hemt family and are provided as variant models within a single manufacturer datasheet.

Description

RES, 1/16W, 0603, 1%, 5.1 OHMS RES, 1/16W, 0603, 1%, 100 OHMS CAP, 470pF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 7.5pF, +/-0.1pF, 0603, ATC CAP, 0.6pF, +/-0.05pF, 0603, ATC CAP, 1.2pF, +/-0.1pF, 0603, ATC CAP, 4.7pF, +/-0.25pF, 100B, ATC CAP

Features

  • 3.3 - 3.6 GHz Operation.
  • 60 W Peak Power Capability.
  • 12 dB Small Signal Gain.
  • 8.0 W PAVE at < 2.0 % EVM.
  • 25 % Drain Efficiency at 8 W PAVE.
  • WiMAX Fixed Access 802.16-2004 OFDM.
  • WiMAX Mobile Access 802.16e OFDMA Rev 3.1 - February 2016 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Volta.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CGH35060F1-Cree.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CGH35060P1 GaN HEMT Wolfspeed
CGH35060P2 GaN HEMT Wolfspeed
CGH35060F1 GaN HEMT Wolfspeed
CGH35060F2 GaN HEMT Wolfspeed
CGH35015 GaN HEMT Wolfspeed

Other Datasheets by Cree (now Wolfspeed)

Part Number Description
CGH35060F1 GaN HEMT
CGH35015 GaN HEMT
CGH35015F GaN HEMT
CGH35030F GaN HEMT
CGH35240F GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and BWA linear amplifier applications. The transistor is supplied in a ceramic/ metal flange and pill package. Cree GaN-on-SiC HEMTs are highly correctable, enabling even greater efficiency when used with digital pre-distortion (DPD). PPNa: cCkGaHge35T0y6p0eF: 414&01C9G3H&354046001P916 Typical Performance Over 3.3-3.6GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.3 GHz 3.4 GHz 3.5 GHz Small Signal Gain 11.7 12.2 12.6 3.6 GHz 12.8 EVM @ 26 dBm 2.05 1.
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