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CGH35060P1 - GaN HEMT

This page provides the datasheet information for the CGH35060P1, a member of the CGH35060F1 GaN HEMT family.

Description

RES, 1/16W, 0603, 1%, 5.1 OHMS RES, 1/16W, 0603, 1%, 100 OHMS CAP, 470pF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 7.5pF, +/-0.1pF, 0603, ATC CAP, 0.6pF, +/-0.05pF, 0603, ATC CAP, 1.2pF, +/-0.1pF, 0603, ATC CAP, 4.7pF, +/-0.25pF, 100B, ATC CAP

Features

  • 3.3 - 3.6 GHz Operation.
  • 60 W Peak Power Capability.
  • 12 dB Small Signal Gain.
  • 8.0 W PAVE at < 2.0 % EVM.
  • 25 % Drain Efficiency at 8 W PAVE.
  • WiMAX Fixed Access 802.16-2004 OFDM.
  • WiMAX Mobile Access 802.16e OFDMA Rev 3.1 - February 2016 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Volta.

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Datasheet Details

Part number CGH35060P1
Manufacturer Cree
File Size 2.51 MB
Description GaN HEMT
Datasheet download datasheet CGH35060P1 Datasheet
Additional preview pages of the CGH35060P1 datasheet.

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Full PDF Text Transcription

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CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and BWA linear amplifier applications. The transistor is supplied in a ceramic/ metal flange and pill package. Cree GaN-on-SiC HEMTs are highly correctable, enabling even greater efficiency when used with digital pre-distortion (DPD). PPNa: cCkGaHge35T0y6p0eF: 414&01C9G3H&354046001P916 Typical Performance Over 3.3-3.6GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.3 GHz 3.4 GHz 3.5 GHz Small Signal Gain 11.7 12.2 12.6 3.6 GHz 12.8 EVM @ 26 dBm 2.05 1.
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