* RDS(ON) ≤ 12.5 mΩ @ VGS=10V, ID=15A RDS(ON) ≤ 19 mΩ @ VGS=4.5V, ID=8.0A * Optimized for high speed switching, Logic level * Enhanced Body diode dv/dt capability * Enhan.

The UTC USG70N11 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG70N11 is suitable for high efficiency synchronous rectificatio.

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