USG120N10 datasheet, mosfet equivalent, UTC

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Features and benefits

* RDS(ON) ≤ 4.5 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 6.5 mΩ @ VGS=6.0V, ID=20A * High Switching Speed
* SYMBOL 2.Drain 1 TO-220 1 TO-263 1.Gate 3.Source
* ORDERING .

Description

The UTC USG120N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG120N10 is suitable for high efficiency synchronous rectificat.

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