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USG120N10 Datasheet, UTC

USG120N10 mosfet equivalent, n-channel power mosfet.

USG120N10 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 169.09KB)

USG120N10 Datasheet
USG120N10
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 169.09KB)

USG120N10 Datasheet

Features and benefits

* RDS(ON) ≤ 4.5 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 6.5 mΩ @ VGS=6.0V, ID=20A * High Switching Speed
* SYMBOL 2.Drain 1 TO-220 1 TO-263 1.Gate 3.Source
* ORDERING .

Description

The UTC USG120N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG120N10 is suitable for high efficiency synchronous rectificat.

Image gallery

USG120N10 Page 1 USG120N10 Page 2 USG120N10 Page 3

TAGS

USG120N10
N-CHANNEL
POWER
MOSFET
UTC

Manufacturer


UTC

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