USG04R022M mosfet equivalent, 40v n-channel sgt enhancement power mosfet.
* RDS(ON) ≤ 2.2 mΩ @ VGS=10V, ID=20A * RDS(ON) ≤ 3.2 mΩ @ VGS=4.5V, ID=20A * Extremely low on-resistance RDS(ON) * Excellent Low Ciss
* SYMBOL
* ORDERING INFORMA.
The UTC USG04R022M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.
* FEATURES
* RDS(ON) ≤ 2.2 mΩ @ VGS=10V, ID=20A * RDS(ON) ≤ 3.2 mΩ .
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