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USG04R022M Datasheet, UTC

USG04R022M mosfet equivalent, 40v n-channel sgt enhancement power mosfet.

USG04R022M Avg. rating / M : 1.0 rating-12

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USG04R022M Datasheet

Features and benefits

* RDS(ON) ≤ 2.2 mΩ @ VGS=10V, ID=20A * RDS(ON) ≤ 3.2 mΩ @ VGS=4.5V, ID=20A * Extremely low on-resistance RDS(ON) * Excellent Low Ciss
* SYMBOL
* ORDERING INFORMA.

Description

The UTC USG04R022M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.
* FEATURES * RDS(ON) ≤ 2.2 mΩ @ VGS=10V, ID=20A * RDS(ON) ≤ 3.2 mΩ .

Image gallery

USG04R022M Page 1 USG04R022M Page 2 USG04R022M Page 3

TAGS

USG04R022M
40V
N-CHANNEL
SGT
ENHANCEMENT
POWER
MOSFET
UTC

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