USG40N10 mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 16 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 28 mΩ @ VGS=4.5V, ID=10A
* High Frequency Switching * Synchronous Rectification
1 TO-220
1 PDFN5×6
1 TO - 252
1 PDFN3×3
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The UTC USG40N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.
The UTC USG40N10 is suitable for high efficiency synchronous rectificatio.
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