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USG170N10 - N-CHANNEL POWER MOSFET

Description

The UTC USG170N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

Features

  • RDS(ON) ≤ 3.5 mΩ @ VGS=10V, ID=20A.
  • High Switching Speed.
  • SYMBOL POWER MOSFET.

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UNISONIC TECHNOLOGIES CO., LTD USG170N10 170A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC USG170N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG170N10 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.  FEATURES * RDS(ON) ≤ 3.
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