USGR028N85 mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 2.8 mΩ @ VGS=10V, ID=50A * Excellent gate charge * Very low on-resistance RDS(ON) * High switching speed * Low reverse transfer capacitance
* SYMBOL
POWE.
The UTC USGR028N85 is a uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS.
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