Datasheet4U Logo Datasheet4U.com

USGR028N85 - N-CHANNEL POWER MOSFET

General Description

The UTC USGR028N85 is a uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • S.
  • RDS(ON) ≤ 2.8 mΩ @ VGS=10V, ID=50A.
  • Excellent gate charge.
  • Very low on-resistance RDS(ON).
  • High switching speed.
  • Low reverse transfer capacitance.
  • SYMBOL POWER MOSFET.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Unisonic Technologies

Part Number Description
USG04R022M 40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET
USG085R035H-T 85V N-CHANNEL POWER MOSFET
USG120N10 N-CHANNEL POWER MOSFET
USG170N03 N-CHANNEL MOSFET
USG170N10 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD USGR028N85 Preliminary 200A, 85V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC USGR028N85 is a uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.  FEATURES * RDS(ON) ≤ 2.