* Frequency Range: DC - 18 GHz
* 47.3 dBm Nominal PSAT at 3 GHz
* 69.5% Maximum PAE
* 19.8 dB Nominal Power Gain at 3 GHz
* Bias: VD = 12 - 32 V, IDQ .

* Defense & Aerospace
* Broadband Wireless TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Product Feature.

The TriQuint TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-10 is designed using TriQuint’s proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave .

TGF2023-2-01

TGF2023-2-02

TGF2023-2-05

TGF2023-2-20

TGF2023-20

TGF2023-01

TGF2023-02

TGF2023-05

TGF2023-10

TGF2021-01

TGF2021-02

TGF2021-04

TGF2021-04-SD

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