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TGF2023-20 Datasheet, TriQuint Semiconductor

TGF2023-20 hemt equivalent, 100 watt discrete power gan on sic hemt.

TGF2023-20 Avg. rating / M : 1.0 rating-11

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TGF2023-20 Datasheet

Features and benefits


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* Frequency Range: DC - 18 GHz 49.6 dBm Nominal Psat at 3 GHz 52% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq.

Application


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* www.DataSheet.net/ Defense & Aerospace Broadband Wireless Product Description Bias conditions: Vd = 28 V, .

Description

Bias conditions: Vd = 28 V, Idq = 2 A, Vg = -3.6 V Typical The TriQuint TGF2023-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-20 is designed using TriQuint’s proven 0.25um GaN production process. This process feat.

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TAGS

TGF2023-20
100
Watt
Discrete
Power
GaN
SiC
HEMT
TriQuint Semiconductor

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