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TGF2023-2-02 - 12 Watt Discrete Power GaN on SiC HEMT

Product Overview

TriQuint Semiconductor

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TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT by TriQuint Semiconductor - Datasheet Preview — Datasheet preview – TGF2023-2-02

Datasheet Details

Part number	TGF2023-2-02
Manufacturer	TriQuint Semiconductor
File Size	1.84 MB
Description	12 Watt Discrete Power GaN on SiC HEMT
Datasheet	TGF2023-2-02 Datasheet
Additional preview pages of the TGF2023-2-02 datasheet.

Product details

Description

The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz.

Features

Frequency Range: DC - 18 GHz.
40.1 dBm Nominal PSAT at 3 GHz.
73.3% Maximum PAE.
21 dB Nominal Power Gain at 3 GHz.
Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA.
Technology: TQGaN25 on SiC.
Chip Dimensions: 0.82 x 0.92 x 0.10 mm Functional Block Diagram General.

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Other Datasheets by TriQuint Semiconductor

TGF2023-2-01 - SiC HEMT
TGF2023-2-05 - 25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10 - 50 Watt Discrete Power GaN on SiC HEMT
TGF2023-20 - 100 Watt Discrete Power GaN on SiC HEMT
TGF2023-01 - 6 Watt Discrete Power GaN on SiC HEMT
TGF2023-02 - 12 Watt Discrete Power GaN on SiC HEMT

Published: May 6, 2016 |