TGF2023-2-02 hemt equivalent, 12 watt discrete power gan on sic hemt.
* Frequency Range: DC - 18 GHz
* 40.1 dBm Nominal PSAT at 3 GHz
* 73.3% Maximum PAE
* 21 dB Nominal Power Gain at 3 GHz
* Bias: VD = 12 - 32 V, IDQ = .
* Defense & Aerospace
* Broadband Wireless
TGF2023-2-02
12 Watt Discrete Power GaN on SiC HEMT
Product Feature.
The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-02 is designed using TriQuint’s proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwave.
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