Datasheet Details
| Part number | TGF2023-01 |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 0.96 MB |
| Description | 6 Watt Discrete Power GaN on SiC HEMT |
| Datasheet |
 TGF2023-01 Datasheet
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Description
The TriQuint TGF2023-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz.
The TGF2023-01 is designed using TriQuint’s proven 0.25um GaN production process.
Features
- Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.66 x 0.10 mm Measured Performance Bias conditions: Vd = 28 V, Idq = 125 mA, Vg = -3.6 V Typical Primary.