TGF2023-2-20 hemt equivalent, sic hemt.
advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The TGF2023-2-20 typically provides 50.2 dBm of satura.
Lead-free and RoHS compliant
Functional Block Diagram
1-16
17
Pad Configuration
Pad No.
1-16 17 Backside
Symbol
VG.
100 Watt GaN HEMT
1 of 21
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TGF2023-2-20
® 100 W, 32 V, DC to 14 GHz, Discrete Power GaN on SiC HEMT
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Drain to Gate Voltage (VDG) Gate Voltage Range (VG)
1.
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