TGF2023-2-01 datasheet, hemt equivalent, TriQuint Semiconductor

Features and benefits

* Frequency Range: DC - 18 GHz
* 38 dBm Nominal PSAT at 3 GHz
* 71.6% Maximum PAE
* 18 dB Nominal Power Gain at 3 GHz
* Bias: VD = 12 - 32 V, IDQ = 25.

Application

* Defense & Aerospace
* Broadband Wireless TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Product Features.

Description

The TriQuint TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-2-01 is designed using TriQuint’s proven TQGaN25 production process. This process features advanced field plate techniques to optimize microwav.

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