TP65H035WS fet equivalent, 650v cascode gan fet.
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
— Intrinsic lifetime tests — Wide gate safety margin — Tra.
The TP65H035WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved.
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