TC2998E fets equivalent, gaas power fets.
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* 20 W Typical Power 10.5 dB Typical Linear Power Gain High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 1.
include high dynamic range power amplifier for military or commercial applications. ELECTRICAL SPECIFICATIONS
Symbol FRE.
The TC2998E is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor. The ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typic.
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