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TC2996A Datasheet, Transcom

TC2996A fets equivalent, gaas power fets.

TC2996A Avg. rating / M : 1.0 rating-11

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TC2996A Datasheet

Features and benefits


* 12 W Typical Power at 1.6 GHz
* 13 dB Typical Linear Power Gain at 1.6 GHz
* High Linearity:IP3 = 50 dBm Typical
* High Power Added Efficiency:Nominal P.

Application

include high dynamic range power amplifiers for commercial applications. ELECTRICAL SPECIFICATIONS ( VDS = 10.5, IDS = 2.

Description

The TC2996A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF test.

Image gallery

TC2996A Page 1 TC2996A Page 2 TC2996A Page 3

TAGS

TC2996A
GaAs
Power
FETs
Transcom

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