TC2996D fets equivalent, 2.45 ghz 12 w flange ceramic packaged gaas power fets.
* 12 W Typical Power at 2.45 GHz
* 11 dB Typical Linear Power Gain at 2.45 GHz
* High Linearity: IP3 = 50 dBm Typical
* High Power Added Efficiency: Nomin.
include high dynamic range power amplifier for commercial applications.
ELECTRICAL SPECIFICATIONS ( VDS = 10.5V, IDS = .
The TC2996D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF test.
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