TC2996B fets equivalent, gaas power fets.
* 12 W Typical Power at 1.9 GHz
* 13 dB Typical Linear Power Gain at 1.9 GHz
* High Linearity: IP3 = 50 dBm Typical
* High Power Added Efficiency: Nominal.
include high dynamic range power amplifiers for commercial applications.
ELECTRICAL SPECIFICATIONS (@ 1.9 GHz)
SYMBOL P.
The TC2996B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF test.
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