Matched GaAs SPDT Switch DC - 2 GHz Features q q q SW-331, SW-333 V 2.00 SW-331 (CR-2) Miniature Ceramic Package Fast Switching Speed, 7 ns Typical

GaAs SPST High Isolation Terminated Switch 0.5 - 2.0 GHz Features • • • • • Terminated RF Output High Isolation: 42 dB up to 2.0 GHz Single Positive C

MICROWAVE CORPORATION v02.1202 HMC364 GaAs HBT MMIC DIVIDE-BY-2, DC - 13.0 GHz Features Ultra Low SSB Phase Noise: -145 dBc/Hz Wide Bandwidth Output

v04.1217 HMC409LP4E GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Amplifiers - Linear & Power - SMT Typical Applications This amplifier is i

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Product Description Sirenza Microdevices’ SBB-5089 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active

NJG1188KG1 Broadband Low Noise Amplifier GaAs MMIC ■ FEATURES ● Wide frequency range 950 to 3224 MHz ● Supply Voltage 3.0 to 5.5V ● Operating cur

GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data

8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Satur

50um Ultra low dark current Analog InGaAs PIN photodiode V4.1HIPD-002 20-10-01 Model: LSIPD-LD50 Features:  High reliability, Ultra low dark curre

SGM2013N GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2013N is an N-chan

MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mob

www.DataSheet4U.com 35.0-45.0 GHz GaAs MMIC Low Noise Amplifier May 2006 - Rev 10-May-06 L1004 Chip Device Layout Features Balanced Design Excellen

SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AN is an N-ch

GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary

CGY 121 A GaAs MMIC Preliminary Datasheet l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC-Amplifier) for mobile communi

LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44

MIXERS - SUB HARMONIC - CHIP v01.0413 Typical Applications The HMC1058 is ideal for: • E-Band Communications Systems • Test Equipment & Sensors • Mil