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Product Description Sirenza Microdevices’ SBB-5089 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active

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GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data

MULTIPLIERS - ACTIVE - SMT v02.0514 HMC576LC3B SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 18 - 29 GHz OUTPUT Typical Applications The HMC576LC3B

LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44

GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary

MIXERS - SUB HARMONIC - CHIP v01.0413 Typical Applications The HMC1058 is ideal for: • E-Band Communications Systems • Test Equipment & Sensors • Mil

SGM2016AM/AP GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AM/AP is a

www.DataSheet4U.com 35.0-45.0 GHz GaAs MMIC Low Noise Amplifier May 2006 - Rev 10-May-06 L1004 Chip Device Layout Features Balanced Design Excellen

GaAs SPDT Terminated Switch DC - 2.5 GHz SW-337, SW-338, SW-339 V2.00 Features q q q SO-8 PIN 8 .1497-.1574 (3.80-4.00) -B.2284-.2440 (5.80-6.20) .

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SWITCHES - MULTI-THROW - SMT HMC245AQS16 / 245AQS16E v00.1213 GaAs MMIC SP3T Non-REFLECTIVE SWITCH, DC - 3.5 GHz Typical Applications The HMC245AQ

www.DataSheet4U.com 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier March 2005 - Rev 01-Mar-05 L1002 Chip Device Layout Features Balanced Design Excell

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www.DataSheet4U.com Matched GaAs SPST Switch DC - 3 GHz Features q q q SW-209 V 2.00 CR-3 Fast Switching Speed, 6 ns Typical Ultra Low DC Power Co