TC2997G fets equivalent, gaas power fets.
* 16 W Typical Power at 3.5 GHz
* 9 dB Typical Linear Power Gain at 3.5 GHz
* High Linearity: IP3 = 52 dBm Typical
* High Power Added Efficiency: Nominal .
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DESCRIPTION The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power .
The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
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