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TPCC8093 Datasheet, Toshiba

TPCC8093 transistor equivalent, field effect transistor.

TPCC8093 Avg. rating / M : 1.0 rating-11

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TPCC8093 Datasheet

Features and benefits

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 4.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (m.

Application


* Lithium-Ion Secondary Batteries 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low d.

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TPCC8093 Page 1 TPCC8093 Page 2 TPCC8093 Page 3

TAGS

TPCC8093
Field
Effect
Transistor
Toshiba

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