Datasheet4U Logo Datasheet4U.com

TPCC8001-H - Field Effect Transistor

Datasheet Summary

Features

  • r intended nor warranted for use in equipment or systems that requir.

📥 Download Datasheet

Datasheet preview – TPCC8001-H

Datasheet Details

Part number TPCC8001-H
Manufacturer Toshiba Semiconductor
File Size 176.24 KB
Description Field Effect Transistor
Datasheet download datasheet TPCC8001-H Datasheet
Additional preview pages of the TPCC8001-H datasheet.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor
  • TPCC8002-H - Silicon N-Channel MOSFET
  • TPCC8003-H - Field Effect Transistor
  • TPCC8005-H - Silicon N-Channel MOSFET
  • TPCC8006-H - Field Effect Transistor
  • TPCC8007 - MOSFETs
  • TPCC8008 - Field Effect Transistor Silicon N-Channel MOS Type
  • TPCC8009 - Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
  • TPCC8102 - Field Effect Transistor Silicon P-Channel MOS Type

Full PDF Text Transcription

Click to expand full text
TPCC8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8001-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Unit: mm Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 mΩ (typ.) ( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 65 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.5 to 2.
Published: |