TPCC8001-H - Field Effect Transistor

Toshiba

Key Features

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TPCC8001-H field effect transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	TPCC8001-H
Manufacturer	Toshiba
File Size	176.24 KB
Description	Field Effect Transistor
Datasheet	TPCC8001-H Datasheet

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TPCC8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8001-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Unit: mm Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 mΩ (typ.) ( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 65 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.5 to 2.