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TPCC8009
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
TPCC8009
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
• • • • Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 5 mΩ (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.2 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating 30 30 ±20 24 72 27 1.9 0.7 75 24 150 −55 to 150
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TPCC8009 Datasheet
