900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

TPCC8007 Datasheet

MOSFETs

No Preview Available !

MOSFETs Silicon N-channel MOS (U-MOS)
TPCC8007
1. Applications
• Notebook PCs
• Mobile Handsets
2. Features
(1) Small footprint due to a small and thin package
(2) Low drain-source on-resistance: RDS(ON) = 3.5 m(typ.) (VGS = 4.5 V)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
(4) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TPCC8007
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 20 V
Gate-source voltage
VGSS
±12
Drain current (DC)
(Note 1)
ID
27 A
Drain current (pulsed)
(Note 1)
IDP
81
Power dissipation
(Tc = 25)
PD 30 W
Power dissipation
(t = 10 s)
(Note 2)
PD
1.9 W
Power dissipation
(t = 10 s)
(Note 3)
PD
0.7 W
Single-pulse avalanche energy
(Note 4)
EAS
190 mJ
Avalanche current
IAR 27 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2011-06-09
Rev.4.0


Toshiba Electronic Components Datasheet

TPCC8007 Datasheet

MOSFETs

No Preview Available !

5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
(Tc = 25)
(t = 10 s)
(Note 2)
Channel-to-ambient thermal resistance
(t = 10 s)
(Note 3)
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: VDD = 16 V, Tch = 25(initial), L = 0.2 mH, RG = 25 , IAR = 27 A
TPCC8007
Symbol
Rth(ch-c)
Rth(ch-a)
Rth(ch-a)
Max Unit
4.1 /W
65.7 /W
178 /W
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2011-06-09
Rev.4.0


Part Number TPCC8007
Description MOSFETs
Maker Toshiba Semiconductor
Total Page 9 Pages
PDF Download

TPCC8007 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 TPCC8001-H Field Effect Transistor
Toshiba Semiconductor
2 TPCC8002-H Field Effect Transistor
Toshiba Semiconductor
3 TPCC8003-H Field Effect Transistor
Toshiba Semiconductor
4 TPCC8005-H Field Effect Transistor
Toshiba Semiconductor
5 TPCC8006-H Field Effect Transistor
Toshiba Semiconductor
6 TPCC8007 MOSFETs
Toshiba Semiconductor
7 TPCC8008 Field Effect Transistor Silicon N-Channel MOS Type
Toshiba Semiconductor
8 TPCC8009 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Toshiba Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy