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TPCC8005-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H)
TPCC8005-H
High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
• • • • • • • Unit: mm
Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.2 mΩ (typ.)( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 79 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD Rating 30 30 ±20 26 78 30 1.
TPCC8005-H Datasheet
