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TPCC8008 Datasheet

Field Effect Transistor Silicon N-Channel MOS Type

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TPCC8008
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS)
TPCC8008
Notebook PC Applications
Portable Equipment Applications
Unit: mm
Small footprint due to a small and thin package
Low drain-source ON-resistance:
RDS (ON) = 4.5 mΩ (typ.) ( VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1.0 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc = 25)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±25
25
75
30
1.9
www.DataSheet.net/
0.7
163
25
2.58
150
55 to 150
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1,2,3:SOURCE 4:GATE
5,6,7,8:DRAIN
JEDEC
JEITA
TOSHIBA
2-3X1A
Weight: 0.02 g (typ.)
Circuit Configuration
8765
1234
1
2009-09-24
Datasheet pdf - http://www.DataSheet4U.co.kr/


Toshiba Electronic Components Datasheet

TPCC8008 Datasheet

Field Effect Transistor Silicon N-Channel MOS Type

No Preview Available !

Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
(Tc = 25)
Rth (ch-c)
4.2
°C/W
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Rth (ch-a)
66
°C/W
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Rth (ch-a)
180
°C/W
Marking (Note 5)
8008
Part number
Product-specific code
Lot No.
TPCC8008
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
www.DataSheet.net/
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 200 μH, RG = 25 Ω, IAR = 25 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: * Weekly code: (Three digits)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
2
2009-09-24
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number TPCC8008
Description Field Effect Transistor Silicon N-Channel MOS Type
Maker Toshiba Semiconductor
Total Page 7 Pages
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