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STS65R190SS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Download the STS65R190SS2 datasheet PDF (STS65R190FS2 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 650v super junction mos power transistor.

Description

STS65R190F(L8A)(T)(S)(D)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 20A, 650V, RDS(on)(typ. )=0.155@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 123 TO-220-3L 1 3 TO-263-2L KEY.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STS65R190FS2-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number STS65R190SS2
Manufacturer Silan Microelectronics
File Size 642.55 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet STS65R190SS2 Datasheet

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Full PDF Text Transcription

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Silan Microelectronics STS65R190F(L8A)(T)(S)(D)S2_Datasheet 20A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION 2 STS65R190F(L8A)(T)(S)(D)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 1 3 123 TO-220F-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L D(2) G(1) S(3) S(3) S(3) DFN-4-8x8x0.85-2.0 FEATURES  20A, 650V, RDS(on)(typ.)=0.
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