Click to expand full text
Silan Microelectronics
STS65R190F(L8A)(T)(S)(D)S2_Datasheet
20A, 650V SUPER JUNCTION MOS POWER TRANSISTOR
DESCRIPTION
2
STS65R190F(L8A)(T)(S)(D)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.
1 3
123
TO-220F-3L
1.Gate 2.Drain 3.Source
13
TO-252-2L
D(2) G(1)
S(3) S(3) S(3)
DFN-4-8x8x0.85-2.0
FEATURES
20A, 650V, RDS(on)(typ.)=0.
STS65R190FS2 Datasheet
