Datasheet4U Logo Datasheet4U.com

STS6308 - N-Channel MOSFET

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3A R DS(ON) (m Ω) Max 83 @ VGS= 10V 107 @ VGS= 4.5V D S OT 23 D S G G S.

📥 Download Datasheet

Datasheet Details

Part number STS6308
Manufacturer SamHop Microelectronics
File Size 172.44 KB
Description N-Channel MOSFET
Datasheet download datasheet STS6308 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STS65R190DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
STS65R190FS2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
STS65R190L8AS2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
STS65R190SS2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
STS65R190TS2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

Other Datasheets by SamHop Microelectronics

Part Number Description
STS6409 P-Channel Enhancement Mode Field Effect Transistor
STS6415 P-Channel Enhancement Mode Field Effect Transistor
STS6601 P-Channel Enhancement Mode Field Effect Transistor
STS6N20 N-Channel MOSFET
STS126 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
Green Product STS6308 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3A R DS(ON) (m Ω) Max 83 @ VGS= 10V 107 @ VGS= 4.5V D S OT 23 D S G G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 60 ±20 TC=25°C TC=70°C 3 2.4 11.4 23 TC=25°C TC=70°C 1.25 0.
Published: |