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r re Pro
STS6409
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
49 @ VGS=-4.5V 50 @ VGS=-4.0V -20V -4.0A 52 @ VGS=-3.7V 58 @ VGS=-3.1V 65 @ VGS=-2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D
SOT 26 Top View
D D G
1 2 3
6 5 4
D D S
G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit -20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C -4.0 -3.2 -15
a
Units V V A A A W W °C
Maximum Power Dissipation
1.25 0.
STS6409 Datasheet
