Datasheet Details
| Part number | STS65R360DS2 |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 555.03 KB |
| Description | 650V SUPER JUNCTION MOS POWER TRANSISTOR |
| Datasheet |
 STS65R360DS2 Datasheet
|
|
|
General Description
STS65R360D(F)(S)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.
It achieves low conduction loss and switching losses.
Key Features
- 12A, 650V, RDS(on)(typ. )=0.3Ω@VGS=10V.
- New revolutionary high voltage technology.
- Ultra low gate charge.
- Periodic avalanche rated.
- Extreme dv/dt rated.
- High peak current capability.
- 100% avalanche tested.
- Pb-free lead plating.
- RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 13 TO-252-2L 1 3 TO-263-2L 12 3 TO-220F-3L KEY.