Datasheet4U Logo Datasheet4U.com

STS65R280SS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Download the STS65R280SS2 datasheet PDF. This datasheet also covers the STS65R280DS2-SilanMicroelectronics variant, as both devices belong to the same 650v super junction mos power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

STS65R280D(F)(S)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 14A, 650V, RDS(on)(typ. )=0.24@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L 13 TO-252-2L 12 3 TO-220F-3L KEY.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STS65R280DS2-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number STS65R280SS2
Manufacturer Silan Microelectronics
File Size 581.00 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet STS65R280SS2 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STS6308 N-Channel MOSFET SamHop Microelectronics
STS6409 P-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STS6415 P-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STS6601 P-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STS6604L Dual Enhancement Mode Field Effect Transistor SamHop

Other Datasheets by Silan Microelectronics

Part Number Description
STS65R280DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR
STS65R280FS2 650V SUPER JUNCTION MOS POWER TRANSISTOR
STS65R190DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR
STS65R190FS2 650V SUPER JUNCTION MOS POWER TRANSISTOR
STS65R190L8AS2 650V SUPER JUNCTION MOS POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics STS65R280D(F)(S)S2_Datasheet 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION STS65R280D(F)(S)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  14A, 650V, RDS(on)(typ.)=0.24@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability  100% avalanche tested  Pb-free lead plating  RoHS compliant 2 1 3 1.
Published: |