SPC6606 mosfet equivalent, n & p pair mosfet.
* N-Channel
12V/4.0A,RDS(ON)=26mΩ@VGS=4.5V 12V/3.0A,RDS(ON)=35mΩ@VGS=2.5V 12V/2.0A,RDS(ON)=50mΩ@VGS=1.8V
* P-Channel -12V/-3.3A,RDS(ON)=70mΩ@VGS=-4.5V -12V/-2.8A,.
such as notebook computer power management and other battery powered circuits where high-side switching, low in-line pow.
The SPC6606 is the N-Channel and P-Channel enhancement mode power field effect transistors w h i c h are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and pr.
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