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SPC6602 - N & P Pair MOSFET

General Description

The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • N-Channel 30V/2.8A,RDS(ON)=60mΩ@VGS=10V 30V/2.3A,RDS(ON)=80mΩ@VGS=4.5V.
  • P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=-10V -30V/-2.5A,RDS(ON)=135mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TSOT-23-6L package design PIN.

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Datasheet Details

Part number SPC6602
Manufacturer SYNC POWER
File Size 555.73 KB
Description N & P Pair MOSFET
Datasheet download datasheet SPC6602 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  N-Channel 30V/2.8A,RDS(ON)=60mΩ@VGS=10V 30V/2.3A,RDS(ON)=80mΩ@VGS=4.