* N-Channel 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V
* P-Channel -20V/1.0A,RDS(ON)=520mΩ@VGS=-4.5V -20V/.

such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.

The SPC6332 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior s.

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