SPC6332 Overview
Description
The SPC6332 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
Key Features
- N-Channel 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V
- P-Channel -20V/1.0A,RDS(ON)=520mΩ@VGS=-4.5V -20V/0.8A,RDS(ON)=700mΩ@VGS=-2.5V -20V/0.7A,RDS(ON)=950mΩ@VGS=-1.8V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- SOT-363 (SC-70-6L) package design
